首页> 外国专利> Method and apparatus for selectively attracting or repelling ionized material from a target surface during physical vapor deposition

Method and apparatus for selectively attracting or repelling ionized material from a target surface during physical vapor deposition

机译:在物理气相沉积过程中从目标表面选择性地吸引或排斥离子材料的方法和设备

摘要

The present invention provides an apparatus and method for reducing the likelihood that reverse sputtered material will be deposited on a target while enhancing target corrosion uniformity and efficiency. The target assembly provides sputtering of a unit of a target material and provides multiple, individually biased bias potentials at different bias potentials to prevent the reverse sputtered material from being deposited on a target unit that is minimally sputtered and preferably biased to a lower potential. Unit or section. The method is provided for individually biasing multiple units of a target structure to provide sputtering of the biased unit at higher potentials and to prevent deposition of reverse sputtered material on the lowered potential biased unit.
机译:本发明提供了一种装置和方法,用于减少反向溅射的材料沉积在靶上的可能性,同时提高靶的腐蚀均匀性和效率。靶组件提供靶材料单元的溅射,并以不同的偏置电势提供多个单独偏置的偏置电势,以防止反向溅射的材料沉积在最小溅射且优选偏置至较低电势的靶单元上。单位或部分。提供该方法用于单独偏置目标结构的多个单元,以在较高电势下提供偏置单元的溅射,并防止反向溅射的材料沉积在降低的电势偏置单元上。

著录项

  • 公开/公告号KR19980064155A

    专利类型

  • 公开/公告日1998-10-07

    原文格式PDF

  • 申请/专利权人 조셉제이.스위니;

    申请/专利号KR19970068999

  • 发明设计人 눌만자임;라마스와미세쉐드리;

    申请日1997-12-16

  • 分类号H01L21/203;

  • 国家 KR

  • 入库时间 2022-08-22 02:47:47

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