FABRICATION METHOD OF POLYSILICON THIN FILM BY METAL COATING

摘要

The present invention relates to a method for producing a polycrystalline silicon thin film. More specifically, the present invention relates to a method for economically manufacturing a large-area polycrystalline silicon thin film at a low temperature by adsorbing a metal to an amorphous silicon thin film and heat treatment. The manufacturing method of the present invention comprises the steps of washing the substrate and depositing an amorphous silicon thin film by LPCVD or PECVD; Adsorbing a metal solution on the silicon thin film by spin coating to a substrate on which the amorphous silicon thin film obtained in the above step is deposited; And heat-treating the silicon thin film to which the metal solution obtained in the electrical process is adsorbed under an inert gas atmosphere at a temperature of 450 to 600 ° C., and the polycrystalline silicon thin film at a temperature lower than 100 ° C. than the conventional method by the present invention. Since it can be produced, it was confirmed that an inexpensive glass substrate can be used in place of an expensive substrate such as quartz, and at the same time, a large area polycrystalline silicon thin film can be economically produced.