首页>
外国专利>
Tantalum oxide (Ta_2O_5) film formation method
Tantalum oxide (Ta_2O_5) film formation method
展开▼
机译:氧化钽(Ta_2O_5)成膜方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
Discloses a method for forming a tantalum oxide film. This is characterized in that it comprises depositing tantalum oxide on a semiconductor substrate and hydrogenating the tantalum oxide. Therefore, the film quality of the tantalum oxide film can be improved to prevent the leakage current.
展开▼