Semiconductor component e.g. silicon carbide MOS transistor for smart power integrated circuit

摘要

In known high voltage smart-power integrated circuits, the power semiconductor component often takes up more than half of the entire chip surface. In order to produce integrated circuits more cost effectively, the consumption of material, especially the drift zone surfaces of power semiconductor components, clearly need to be reduced. Silicon carbide contains an approximately electric breakdown field strength which is ten times higher than that of silicon. The integration of parts of a semiconductor component which receive voltage with silicon carbide enables the production of considerably smaller drift zones which have identical blocking voltage. In a lateral current conducting SiC-MOS-transistor, the SiC layer (6) which is approximately between 1-2 mu m thick and covered by a SiO2 layer (11) is arranged on a Si-substrate (2) in a dielectrically isolated manner. Two respective n+-doped SiC areas (7,8) serve as source contacts or drain contacts. The electron conducting channel is formed on the surface of a p+-doped area (13) of the SiC layer (6) situated opposite from the gate electrode (14). Said area (13) is connected to the only weak electron conducting SiC drift zone (12).