BiCMOS semiconductor SRAM device circuit

摘要

The semiconductor circuit includes a signal input node (NA). A first switch element (Q2) has its power electrode node and its control electrode node connected together, and is made conductive in accordance with a potential of an input signal applied to the signal input node. The circuit also has a signal output node (NB). A second switch element (W4) has a control electrode node which is connected to the control electrode node of the first switch element. The second switch element drives the signal output node at a stipulated potential level. A capacitance element (CS) transmits the input signal to the control nodes of the first and second switch elements by capacitive coupling.