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Process of etching silicon nitride layer by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen
Process of etching silicon nitride layer by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen
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机译:利用含六氟化硫,溴化氢和氧气的蚀刻气体蚀刻氮化硅层的工艺
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摘要
A silicon nitride layer on a silicon oxide layer is selectively etched by using etching gas containing sulfur hexafluoride, hydrogen bromide and oxygen, and the hydrogen bromide is large enough in vapor pressure to maintain the composition of the etching gas without a heater.
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