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Semiconductor memory device having peripheral circuit and interface circuit fabricated on bulk region out of silicon-on-insulator region for memory cells
Semiconductor memory device having peripheral circuit and interface circuit fabricated on bulk region out of silicon-on-insulator region for memory cells
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机译:具有在绝缘体上硅区域之外的用于存储单元的块区域上制造的外围电路和接口电路的半导体存储器件
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摘要
A semiconductor dynamic random access memory device has a memory cell array fabricated on a silicon-on-insulator region and peripheral and interface circuits fabricated on a bulk region; even if the circuit components of the peripheral circuit are increased together with the memory cells, the bulk region effectively radiates the heat generated by the peripheral and interface circuits, thereby preventing the memory cells from a temperature rise.
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