SEMICONDUCTOR MEMORY DEVICE HAVING PERIPHERAL CIRCUIT AND INTERFACE CIRCUIT FABRICATED ON BULK REGION OUT OF SILICON-ON-INSULATOR REGION FOR MEMORY CELLS

摘要

The present invention relates to a semiconductor dynamic random access memory device having a memory cell array 31 fabricated on SOI region 30a, and peripheral and interface circuits 32/33 fabricated on bulk region 30b. Even though the circuit elements of the peripheral circuit 32 increase with the memory cells, the bulk region 30b effectively dissipates heat generated by the peripheral and interface circuits 32/33, thus protecting the memory cells from temperature rise. do.