High density single poly metal-gate non-volatile memory cell

摘要

A high density single-poly metal-gate non-volatile memory cell uses a layer of tunnel oxide formed over a silicon substrate. A floating gate is formed over the tunnel oxide. Source and drain regions are ion implanted in the silicon substrate such that the source and drain regions are self- aligned to the corresponding edges of the floating gate. Following a high temperature anneal cycle which removes the defects in the source and drain regions, a composite layer of ONOP (Oxide-Nitride- Oxide- Polysilicon) coupling dielectric is formed over the floating gate. A metal, typically an aluminum alloy, forms the control gate of the memory cell on top of the composite layer of ONOP coupling dielectric.