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Method of manufacturing source region of flash EEPROM memory cell field
Method of manufacturing source region of flash EEPROM memory cell field
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机译:快闪EEPROM存储单元场的源区的制造方法
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摘要
The field insulation in a flash memory cell is provided by an oxide/polysilicon/oxide sandwich. The memory cell area is reduced by dopant implantation, self-aligned with respect to the word lines of two adjacent memory cells, for producing the source regions and source connections. The field insulation produces a capacitance between the doping region and the polysilicon layer of the insulation layer which improves the read characteristic of the memory cell.
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