FORMATION OF METALLIC NITRIDED FILM BY CHEMICAL VAPOR PHASE DEPOSITION AND FORMATION OF METALLIC CONTACT OF SEMICONDUCTOR DEVICE USING THIS FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a metallic nitrided film by a chemical vapor phase deposition method and to provide a method for forming a metallic contact of a semiconductor device using. SOLUTION: This method has a stage in which a semiconductor substrate is charged into a vapor depositing chamber, a stage in which a metallic source is flowed into the vapor depositing chamber, a stage in which a purge gas is flowed into the vapor depositing chamber, and the metallic source remaining in the vapor depositing chamber is removed, a stage in which the inflow of the purge gas is cut off, the nitrogen source gas is flowed into the vapor depositing chamber so as to be reacted with the metallic source adsorbed by the semiconductor substrate and a stage in which the inflow of the nitrogen source gas is cut off, the purge gas is flowed into the vapor depositing chamber and the nitrogen source remaining in the vapor depositing chamber is removed, and a metallic nitrided film is formed on the semiconductor substrate. In this way, the metallic nitrided film having low specific resistance and a low Cl content while being excellent in level difference applicability at a low temp. of =500 deg.C can be obtd., whose deposition rate is about 20 Å/cycle, and it is also suitable for mass production.