Simultaneous formation of a metallic Mn layer and a MnO_x / MnSi_xO_y barrier layer by chemical vapor deposition at 250°C - (PPT)

摘要

Deposition behavior and properties of MP-21 was investigated. 1. Metallic Mn was deposited at T > 230°C. 2. A thin Mn oxide layer was formed at the Mn/SiO_2 interface. 3. The thin layer showed a good diffusion barrier property after annealing at 400 °C for 10 h. 4. A part of the Mn oxide layer was embedded in the dielectric layer. 5. The metallic Mn layer on the Mn oxide barrier layer is expected to have additional functions such as an adhesion promoter with Cu, a seed layer for Cu plating, a stuffing element at a cap/Cu interface.