METHOD OF FORMING SEMICONDUCTOR LAYER EPITAXIALLY GROWN ON METAL LAYER AND LIGHT EMITTING SEMICONDUCTOR DEVICE MANUFACTURED USING THE METHOD

摘要

PROBLEM TO BE SOLVED: To form a single crystal semiconductor layer on a metal layer formed on an insulative substrate wherein this semiconductor can be directly formed on the metal layer. SOLUTION: In the method of forming a single crystal semiconductor layer on a metal layer, on the occasion of the metal layer being formed on an insulative substrate having a surface to form layers and the single crystal structure semiconductor layer on the metal layer 11, the epitaxially grown metal layer 11 is formed on the insulative substrate 10 having a single crystal structure, and the epitaxially grown single crystal structure semiconductor layer 12 is formed on the metal layer.