首页> 外国专利> ELECTROLYTE FOR ELECTROPLATING LOW STRESS CRACK RESISTANT RUTHENIUM LAYER, ITS PRODUCTION, AND UTILIZATION OF PYRIDINE AND N-ALKYLATED PYRIDIUM SALT AS ELECTROLYTE ADDITIVE

ELECTROLYTE FOR ELECTROPLATING LOW STRESS CRACK RESISTANT RUTHENIUM LAYER, ITS PRODUCTION, AND UTILIZATION OF PYRIDINE AND N-ALKYLATED PYRIDIUM SALT AS ELECTROLYTE ADDITIVE

机译:用于电镀低应力抗裂钌层的电解质,其生产以及利用吡啶和N-烷基化吡啶盐作为电解质添加剂

摘要

PROBLEM TO BE SOLVED: To obtain a thick ruthenium layer free from crack by containing pyridine or a N-alkylated prydinium salt. ;SOLUTION: The N-alkylated prydinium salt contained in the electrolyte is a compound expressed by a formula. In the formula, R' is H, a 1-6C alkyl, -CH=CH2, =CO2Na. Among the compounds, a particularly preferable one is 1-benzyl-3-sodium carboxy-pyridium chloride or the like. The content of pyridine or the said compound in the electrolyte is 0.1-100 g/l. The electrolyte composition contains ruthenium chloride and amide sulfuric acid and/or ammonium sulfaminate in a form forming a complex with ruthenium as a starting material. The content of ruthenium is controlled to 1-100 g/l and the content of amide sulfuric acid and/or ammonium sulfaminate is controlled to 1-10 g/l per 1 g/l ruthenium.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:通过包含吡啶或N-烷基化的ry盐获得不破裂的厚钌层。 ;解决方案:电解质中包含的N-烷基化salt盐是一种由下式表示的化合物。式中,R’为H,1-6C烷基,-CH = CH 2 ,= CO 2 Na。在这些化合物中,特别优选的是1-苄基-3-羧甲基吡啶鎓氯化钠等。电解质中吡啶或上述化合物的含量为0.1〜100g / l。电解质组合物包含氯化钌和酰胺硫酸和/或氨基磺酸铵,其形式为与钌作为配合物形成络合物。每1 g / l钌中的钌含量控制在1-100 g / l,酰胺硫酸和/或氨基磺酸铵的含量控制在1-10 g / l .;版权:(C)1999,JPO

著录项

  • 公开/公告号JPH11152596A

    专利类型

  • 公开/公告日1999-06-08

    原文格式PDF

  • 申请/专利权人 DEGUSSA AG;

    申请/专利号JP19980268074

  • 申请日1998-09-22

  • 分类号C25D3/50;

  • 国家 JP

  • 入库时间 2022-08-22 02:33:18

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