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MANUFACTURE OF CAPACITORS FOR ANALOG FUNCTIONS

机译:模拟功能电容器的制造

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor in which constituents other than an upper electrode of the capacitor are prevented from being affected by a doping agent when doped and permitting the upper electrode as well as a lower electrode of the capacitor to have a sufficient doping level and substantially the same doping concentration with each other. ;SOLUTION: After polishing the upper surface of an upper electrode 112 of capacitor by CMP(chemical mechanical polishing), the capacitor is doped through the same processes as a lower electrode 106a of the capacitor. After the lower electrode 106a of the capacitor has been formed, a thermal oxidation step is performed so that impurity ions implanted to the lower electrode 106a of the capacitor are isolated at the upper surface of the lower electrode 106a of the capacitor. Consequently, the upper and the lower electrodes 112 and 106a of the capacitor are brought into substantially the same doping concentration at the interfaces with the upper and the lower electrodes.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种用于制造电容器的方法,其中在掺杂时防止电容器上电极以外的成分受到掺杂剂的影响,并允许电容器的上电极和下电极进行掺杂。具有足够的掺杂水平和彼此基本相同的掺杂浓度。 ;解决方案:在通过CMP(化学机械抛光)抛光电容器的上电极112的上表面之后,通过与电容器的下电极106a相同的工艺来掺杂电容器。在形成电容器的下部电极106a之后,执行热氧化步骤,以使得注入到电容器的下部电极106a的杂质离子在电容器的下部电极106a的上表面处被隔离。因此,电容器的上电极112和下电极106a在与上电极和下电极的界面处达到基本上相同的掺杂浓度。;版权:(C)1998,JPO

著录项

  • 公开/公告号JPH10313094A

    专利类型

  • 公开/公告日1998-11-24

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRON CO LTD;

    申请/专利号JP19980120261

  • 发明设计人 OH CHANG-BONG;KIM YOUNG-WUG;

    申请日1998-04-30

  • 分类号H01L27/04;H01L21/822;

  • 国家 JP

  • 入库时间 2022-08-22 02:32:46

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