首页> 外国专利> CHEMICAL VAPOR DEPOSITION FOR SINGLE WAFER AND QUARTZ PIN LIFT FOR ETCHING PROCESS CHAMBER

CHEMICAL VAPOR DEPOSITION FOR SINGLE WAFER AND QUARTZ PIN LIFT FOR ETCHING PROCESS CHAMBER

机译:单晶片的化学气相沉积和蚀刻工艺腔的石英销提升

摘要

PROBLEM TO BE SOLVED: To provide a wafer carrier apparatus which includes a susceptor for providing uniform heating and thermal uniformity or thermal distribution through the entire susceptor, to thereby realize uniform heating and thermal distribution over an entire processing semiconductor wafer. ;SOLUTION: A wafer carrier apparatus 200 includes a susceptor 208 having a surface on which a wafer 205 is carried on its rear side. The susceptor 208 has a plurality of guide recesses 212. The apparatus 200 also includes a pin lift 224 having a plurality of pins extended therefrom. The plurality of pins are arranged so as to be passed through the plurality of guide recesses 212 of the susceptor 208 and be engaged with the bottom side of the wafer 205. The suceptor 208 is arranged to be moved in a direction substantially perpendicular to the plane of the susceptor with respect to the plurality of pins.;COPYRIGHT: (C)1998,JPO
机译:解决的问题:提供一种晶片承载装置,其包括基座,该基座用于在整个基座上提供均匀的加热和热均匀性或热分布,从而在整个处理半导体晶片上实现均匀的加热和热分布。解决方案:晶片运载装置200包括基座208,该基座具有在其背面上承载晶片205的表面。基座208具有多个引导凹槽212。装置200还包括具有多个从其延伸的销的销升降器224。布置多个销以使其穿过基座208的多个引导凹口212并且与晶片205的底侧接合。基座208被布置为在基本垂直于平面的方向上移动。基座相对于多个销的位置。;版权所有:(C)1998,JPO

著录项

  • 公开/公告号JPH10335435A

    专利类型

  • 公开/公告日1998-12-18

    原文格式PDF

  • 申请/专利权人 APPLIED MATERIALS INC;

    申请/专利号JP19980121230

  • 发明设计人 BUI BUNH;ANDERSON ROGER N;

    申请日1998-04-30

  • 分类号H01L21/68;H01L21/205;H01L21/31;H01L21/324;

  • 国家 JP

  • 入库时间 2022-08-22 02:31:42

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