Impurity diffusion treatment manner and semiconductor production device of semiconductor substrate

摘要

Abstract Topic In the uniformity inside the surface of high impurity concentration improvingFrom, it improves the yield rate of semiconductor equipment. Solutions Inside pillar section 32 of quartz boat 3, horizontalityThe 0 - the 10 (vis-a-vis horizontal direction vis-a-vis the vertical of the surfaceWay the 80 - the 90) it possesses angle, the channel 32A facilitiesThe ke, interposing semiconductor substrate 2 from this channel 32A, the semiconductor basisRaising board 2, it supports.