首页> 外国专利> Process for the preparation of partially reduced sputter targets for cathode sputtering based on indium oxide-tin oxide-powder mixtures and targets thus produced

Process for the preparation of partially reduced sputter targets for cathode sputtering based on indium oxide-tin oxide-powder mixtures and targets thus produced

机译:基于氧化铟-氧化锡-粉末混合物制备部分还原的用于阴极溅射的溅射靶的方法和由此制备的靶

摘要

A process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is at least partly formed from SnO and together with the In2O3 is subjected to a mixing treatment before compressing. Also claimed is a process for mfg. a part-reduced sputter target for cathodic sputtering on the basis of indium oxide-tin oxide powder mixts. by means of pressure supported sintering is novel in that the tin-contg. component is completely formed from SnO and together with SnO2 and In2O3 is subjected to a mixing treatment before compressing. Also claimed is a part-reduced sputter target for mfg. transparent electrically-conducting layers comprising a target mfd. by one of the above methods.
机译:制造过程。一种基于氧化铟-氧化锡粉末混合物的阴极减溅溅射靶。通过压力支撑的烧结是新颖的,因为锡接触。组分至少部分由SnO形成,并与In2O3一起在压缩前进行混合处理。还要求制造一种方法。一种基于氧化铟-氧化锡粉末混合物的阴极减溅溅射靶。通过压力支撑的烧结是新颖的,因为锡接触。组分完全由SnO形成,并与SnO2和In2O3一起在压缩前进行混合处理。还要求一种用于制造的零件减少的溅射靶。透明导电层,其包含靶mfd。通过上述方法之一。

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