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P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule
P-doped silicon macromolecule with a multilayer structure, method for producing the same, device for carrying out said method, and a transistor constructed on the basis of the silicon macromolecule
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机译:具有多层结构的p掺杂的硅大分子,其制造方法,实施该方法的装置以及基于该硅大分子构造的晶体管
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摘要
The invention relates to a P-doped silicon macromolecule with a multilayer structure. A dopant atom is molecularly allocated to each silicon atom, the dopant atom of each molecule being located on the corners of an outer multi-surfaced structure and the silicon atom of each molecule being located on the corners of an inner multi-surfaced structure which is laterally parallel to the outer multi-surfaced structure.
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