P-doped silicon macromolecule with multi-surface structure, process for its manufacture and preparation for the process and transistor based on the silicon macromolecule

摘要

The invention relates to a P-doped silicon macromolecule with a multilayer structure. A dopant atom is molecularly allocated to each silicon atom, the dopant atom of each molecule being located on the corners of an outer multi-surfaced structure and the silicon atom of each molecule being located on the corners of an inner multi-surfaced structure which is laterally parallel to the outer multi-surfaced structure.