High-quality Rat A-layer selection of growth methods, high-quality Rat A-layer growth board and high quality Rat A-layer growth Semiconductor device

摘要

In selective growth to reduce the stress generated in the GaN layer, a selective growth method of a GaN layer having a relatively flat surface and reduced crystal defects is provided.;An AlN thin layer is appropriately interposed between the GaN layers at a predetermined interval during selective growth of the GaN layer.