GROWTH OF SINGLE NITRIDE-BASED SEMICONDUCTORS USING SUBSTRATE DECOMPOSITION PREVENTION LAYER AND MANUFACTURING OF HIGH-QUALITY NITRIDE-BASED LIGHT EMITTING DEVICES

摘要

The present invention relates to a vertical-type light emitting device manufacturing method using the single-crystal nitride-based semiconductor material growth on the top conductive substrate: By default, the removed substrate preparing organic debris, including the natural oxide layer which is present above a conductive substrate, a high temperature / substrate decomposition for protecting the strain of the substrate in an atmosphere of hydrogen-barrier film (substrate decomposition prevention Layer: SDPL) as a thick aluminum oxide (AlxOy) or aluminum oxides of nitrogen (AlxNyOz) a thin layer deposited as a matrix, nitride-based buffer layer (nitride-based buffer and a single crystal nitride-based semiconductor including layer) are sequentially stacked, a decomposition preventing the thin film layer of aluminum oxide or aluminum nitrogen oxide thin film layer in the matrix is ​​the transparent thin film layer composed of a single layer (Single layer) or a double layer (Bi-layer) It is stacked, and the a-aluminum oxide or Degradation prevents the thin film layer composed of material containing aluminum oxides of nitrogen in the matrix is ​​a single crystal (Single Crystal) or poly (Polycrystal) thin film layer in order to grow a single-crystal nitride-based semiconductor of high quality at the same time as the conductive substrate deformation and degradation protection in high temperature / hydrogen atmosphere It should be formed. Using the offer / development method in the present invention to grow a high quality single crystal nitride-based semiconductor growth, in order to create a new concept in the nitride-based light emitting device film preferentially substrate degradation (Substrate Decomposition Prevention Layer: SDPL) of aluminum oxide or aluminum NOx that the thickness of the deposition to less than 10 micron meters is preferred. A light emitting element using a nitride-based semiconductor single crystals developed by the present invention is a high capacity, large area, and high-performance light emitting device manufactured in high luminance.