Method of manufacturing a triode type ultra sharp tip emitter of a field emission display device

摘要

The present invention relates to a method of manufacturing an electric field strengthening structure of a triode tip type ultrasarp tip which increases the number of tips per unit area and simultaneously compensates for weakening of an electric field field. (4) is deposited on the oxide layer (3) on the upper layer, and the metal is patterned to form an oxide layer (3) on the oxide layer (3) A step of vertically etching an exposed oxide layer 3 between the patterned metal 4, a step of growing the silicon whisker 5 using a CVD technique, a step of oxidizing silicon by a dry oxidation process in the furnace And a step of immersing it in dilute hydrofluoric acid to shave off the oxide layer around the tip of the silicon whisker (5).