High-voltage CMOS inverter and high-voltage CMOS NAND circuit

摘要

The present invention discloses a high voltage CMOS inverter and a high voltage CMOS nAND circuit. In the CMOS inverter, a first PMOS transistor having an input voltage applied to a gate and an operating voltage applied to a source and a bulk is applied to the gate, a half of the operating voltage is applied to the gate, the operating voltage is applied to the bulk, A first PMOS transistor connected to the drain of the one PMOS transistor and outputting an output voltage to the drain, a first NMOS transistor to which an input voltage is applied to the gate, a ground voltage is applied to the source and the bulk, And a second NMOS transistor having a source connected to a drain of the first NMOS transistor and a drain connected to a drain of the second PMOS transistor.