A method of manufacturing a field emission array (FEA) on a silicon (SOI) substrate formed on an insulating layer

摘要

The present invention relates to a method of fabricating a FEA integrated with an FEA for FED and / or MOSFET by applying LOCOS technology on an SOI substrate, comprising the steps of: doping a monocrystalline silicon layer on an SOI substrate; 11. A method of manufacturing a semiconductor device, comprising: forming a buffer oxide film (12) by high temperature thermal oxidation of a silicon oxide film (11) on a substrate; forming a silicon nitride film (13) on the buffer oxide film; Etching a buffer oxide film in a portion where there is no silicon nitride film strip pattern and etching the exposed doped silicon layer; forming a fine silicon nitride film pattern (132) on the silicon nitride film strip pattern; Forming a gate oxide film 14 by etching the silicon nitride film pattern; wet etching the silicon nitride film pattern to etch the buffer oxide film located below Forming a gate hole (15) by encapsulating the exposed silicon layer; forming a gate electrode (15) by vertically depositing an evaporation material on the silicon substrate to form a gate electrode layer (16) Forming a metal layer in the hole, and forming a field emission tip (17) on the metal layer in the gate hole.