Manufacturing method of large area thyristor using groove structure silicon wafer direct bonding technology

摘要

The present invention relates to a large-area thyristor manufacturing method using a groove-structure silicon wafer direct bonding technology, to increase the mechanical strength of the silicon wafer in the manufacture of large-area (large-capacity) thyristor device to prevent bending and breakage of the silicon wafer. In addition, by adding a p ⁺ -buried layer to the p-base to control the resistance and thickness of the p-base to improve the switching characteristics of the device.