Method for manufacturing TASI Ni diffusion barrier film and contact junction and multilayer metal wiring of semiconductor device using same

摘要

In the fabrication of devices, in the resistive bonding process between silicon (Si) and compound semiconductors (GaAs, GaN, InP) and the multi-layer metal wiring process for interconnection between individual devices, the semiconductor / metal, metal / metal, interlayer insulating layer / metal By using the tantalum silicide nitride (TaSiN _x ) three-element diffusion barrier, the conventional double-element diffusion barrier is prevented from expanding at a heat treatment temperature of 500 to 700 ° C, preventing defects of high density and deterioration of electrical properties. On the other hand, even after the subsequent heat treatment at a high temperature of 850 ℃ or more can prevent the diffusion of the semiconductor and copper metal, there is a feature that does not cause any deterioration of electrical characteristics and defects. Therefore, the present invention has superior characteristics to the multi-layered metal wiring using a conventional diffusion barrier layer as a new multi-layered metal wiring structure in the manufacturing method of the memory device and the non-memory device.