A method of fabricating a semiconductor device, comprising ashing the photoresist mask with a plasma generated from NxHy gas.

摘要

By using the plasma 28b generated from the N _x H _y gas, the photoresist mask is removed from the interlevel insulating structure 24, and since the SiCH ₃ bond is not replaced at all by the Si-OH bond during the removal of the photoresist mask. The plasma 28b does not cause the organic insulating layer 24b that forms part of the interlevel insulating structure to be hygroscopic.