Plasma generating method in RPS(Remote Plasma Source) and method for fabricating semiconductor device comprising the same plasma generating method

摘要

The technical idea of the present invention provides a method of generating a plasma capable of improving selectivity in an etching process and minimizing damage to a film quality, and a method of manufacturing a semiconductor device including the method. The plasma generation method is to supply at least one first process gas to a first RPS (Remote Plasma Source), and apply a first energy having a first power at a first duty ratio to generate a first plasma. Generating a; And supplying at least one second process gas to the second RPS and applying second energy having a second power at a second duty ratio to generate a second plasma.