METHOD AND APPARATUS OF GENERATING GAS PLASMA, GAS COMPOSITION FOR GENERATING PLASMA AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME, PARTICULARLY CONCERNED WITH USING C3F8 GAS IN SEMICONDUCTOR FABRICATING PROCESS

摘要

PURPOSE: A method and an apparatus of generating gas plasma, a gas composition of generating plasma, and a method of fabricating a semiconductor device using the same are provided to reduce the manufacturing cost by using an inexpensive gas such as C3F8. CONSTITUTION: A first electric field is formed in a first direction perpendicular to a flowing direction of floating gas by applying a current in the same direction as the flowing direction of the floating gas. A second electric field is formed in parallel to the flowing direction of the floating gas. Plasma is generated by applying the first electric field and the second electric field to the floating gas. The floating gas includes gas containing fluoric atoms, oxygen gas, and argon gas.