Transverse Bipolar Transistors with Integrated Injection Logic

摘要

In the transverse bipolar transistor to which the integrated injection logic (I ² L) according to the present invention is applied, each impurity diffusion region for forming an emitter, a base, and a collector is arranged in a transverse direction and the impurities A transverse bipolar transistor comprising a first element formed so that a diffusion region is in contact with a polysilicon pattern, and a second element having a different conductivity from the first element and insulated from the first element by an oxide film. The injector is additionally formed on the base of the first device, and the collector of the second device is separated and formed. The chip area is reduced according to the I ² L applied to the conventional vertical device. In addition to reducing latency and improving device speed, one transistor that is distributed is a common transistor. Since the current amplification factor is almost the same as that, it has the advantage of making the distributed transistor more than 10 times than the conventional one.