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LARGE SCALE INTEGRATED CIRCUIT FOR LOW VOLTAGE OPERATION

机译:大型集成电路,低电压运行

摘要

Even for a wide range of supply voltage, a variation in power supply voltage of the wide range as for the voltage conversion circuit can respond to the type of power to the integrated semiconductor device consisting of fine elements in order to provide a large-scale integrated circuits that operate at a constant operating speed, each of the first circuit and a second circuit block operating in the block and a larger second voltage lower than the first voltage, the second circuit block comprises a number of logic circuits and a number of logic circuits operating in the first voltage is 2 between the voltage source-drain path, and including a first conductive type of the first MISFET, the second of the first conductive type second MISFET, the agent of claim 3 MISFET and the second conductive type of a second conductivity type 4 MISFET connected in series , a second MISFET of the first gate, the second bar having a greater level than the low level of the second voltage soon as the first bias voltage is supplied having a level lower than the high level of the second voltage at the same time, the gate of the MISFET 3 And a configuration in which ground voltage is supplied.; By adopting such a structure, than it is possible to provide a memory circuit which operates without significantly inhibit the rate performance even at a low power supply voltage can use a battery backup as a memory in memory or battery such action, but again not limited to the sense amplifier , it is of high speed and obtained an effect that it can provide the LSI of the low power consumption by using suitably selected in accordance with application of the circuit.
机译:即使对于宽范围的电源电压,对于电压转换电路,宽范围的电源电压的变化也可以响应于由精细元件组成的集成半导体器件的功率类型,以便提供大规模的集成。以恒定操作速度运行的电路,第一电路块和第二电路块中的每一个都在该块中运行,并且第二电路块中的第二电压块低于第一电压,第二电路块包括多个逻辑电路和多个逻辑电路在第一电压下工作的电压是在电压源-漏路径之间,并且包括第一MISFET的第一导电类型,第二MISFET的第二导电类型,权利要求3的代理和第二MISFET的第二导电类型导电类型为4的MISFET串联连接,第一栅极的第二MISFET,第二条具有比第二电压的低电平更高的电平同时,提供具有比第二电压的高电平低的电平的电压,MISFET 3的栅极以及提供接地电压的配置。通过采用这样的结构,有可能提供一种即使在低电源电压下也不会显着抑制速率性能而工作的存储电路,可以将备用电池用作存储器中的存储器或这种电池,但是同样不限于读出放大器,它是高速的和而获得的效果,它可以通过使用根据与电路的应用适当地选择提供低功耗的LSI。

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