SINGLE-CRYSTAL SILICON WAFER AND THERMAL OXIDATION OF ITS SURFACE

摘要

The present invention is to obtain a silicon single crystal wafer that is improved so as not to produce accelerated oxidation when forming a gate oxide film.;The silicon single crystal wafer according to the present invention includes a silicon single crystal substrate 1.;At the outer surface of the silicon single crystal substrate 1, the potassium concentration is 2 × 10 ¹¹ atoms / cm 2 or less.