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WAFER WHICH HAS OUTSIDE DECLINE

机译:下降幅度最大的晶圆

摘要

1. The technical field of the invention as set forth in the claims;A wafer having an outer circumferential sloped surface.;2. The technical problem the invention is trying to solve;When P / R is applied, the centrifugal force at the wafer edge can overcome the surface tension in place and proceed smoothly to the outside, resulting in thinner and better P / R coating and flatness. To provide an improved wafer to improve the efficiency of the process.;3. Summary of solution of design;A wafer applied to a photoresist coating process during a lithography process, wherein the wafer has an inclined surface formed at a peripheral edge thereof, and the inclined surface is formed such that the inclined surface is gradually lowered from the original surface height toward the outside from the inside of the edge portion. To provide a wafer.;4. Important uses of the devise;In the semiconductor device manufacturing process, it is applied to the lithography process, it is possible to ensure the uniformity of the thin P / R coating film and coating film thickness, and to prevent damage to the wafer coating film in the EBR process, there is an effect of improving the yield.
机译:1.根据权利要求1所述的本发明的技术领域;具有外圆周倾斜表面的晶片; 2。本发明试图解决的技术问题;当施加P / R时,晶片边缘处的离心力可以克服适当的表面张力,并顺利地向外传播,从而产生更薄和更好的P / R涂层和平坦度。提供改进的晶片以提高工艺效率; 3。设计方案的概述;一种在光刻过程中应用于光致抗蚀剂涂覆工艺的晶片,其中该晶片在其外围边缘上形成有倾斜表面,并且该倾斜表面形成为使得该倾斜表面从原始表面逐渐降低。从边缘部分的内部朝向外部的表面高度。提供晶片; 4。该装置的重要用途;在半导体器件的制造过程中,将其应用于光刻工艺中,可以确保薄的P / R涂膜和涂膜厚度的均匀性,并防止对晶片涂膜的破坏在EBR工艺中,有提高产量的作用。

著录项

  • 公开/公告号KR200158364Y1

    专利类型

  • 公开/公告日1999-10-15

    原文格式PDF

  • 申请/专利权人 HYUNDAI ELECTRONICS IND. CO.LTD;

    申请/专利号KR19960062344U

  • 发明设计人 이철수;한상준;

    申请日1996-12-30

  • 分类号H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-22 02:14:46

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