首页> 外国专利> Wiring method for semiconductor components to prevent product piracy and product manipulation, semiconductor component produced by the method and use of the semiconductor component in a chip card

Wiring method for semiconductor components to prevent product piracy and product manipulation, semiconductor component produced by the method and use of the semiconductor component in a chip card

机译:防止产品盗版和产品操纵的半导体组件的布线方法,通过该方法生产的半导体组件以及该芯片组件在芯片卡中的用途

摘要

The present invention relates to a method for producing a metallised-circuit structure for preventing product piracy and manipulation as well as to a semi-conductor component produced according to this method and to the use of said semi-conductor component in a chip card. This method can be implemented using standardised semi-conductor techniques which are compatible with CMOS circuits, wherein the purpose of said method is to forestall the use of the so-called reverse engineering for acquiring foreign technological know-how or for reading and/or manipulating information stored in said component. According to the method of the present invention, it is further possible to produce a semi-conductor component which is protected against the influence of the environment. This method comprises processing the component layer in the substrate (1) and interrupting said processing immediately before obtaining a metallisation complex. The component substrate (1) thus obtained is assembled by applying its front side against the front side of a manipulation substrate (6), said component substrate (1) being then made thinner from the rear side. Contact holes (9) are then etched during a corresponding lithographic stage through the remaining thin layer of the component substrate, wherein said holes stop at the level of the areas to be brought into contact and are metallised so as to form electric contacts relative to the components.
机译:本发明涉及一种用于防止产品盗版和操纵的金属化电路结构的制造方法,以及根据该方法制造的半导体组件,并且涉及所述半导体组件在芯片卡中的用途。该方法可以使用与CMOS电路兼容的标准化半导体技术来实现,其中所述方法的目的是阻止使用所谓的逆向工程来获取外国技术知识或用于阅读和/或操纵。存储在所述组件中的信息。根据本发明的方法,还可以生产一种不受环境影响的半导体组件。该方法包括在衬底(1)中处理组分层并在获得金属化络合物之前立即中断所述处理。通过将其前侧施加在操作基板(6)的前侧上来组装由此获得的部件基板(1),然后将所述部件基板(1)从后侧做得更薄。然后,在相应的光刻阶段,通过元件衬底的其余薄层蚀刻出接触孔(9),其中,这些接触孔在要接触的区域的水平处停止,并进行金属化处理,从而形成相对于接触层的电接触组件。

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