Gallium nitride based semiconductor layer is formed by electron cyclotron resonance molecular beam epitaxy

摘要

A gallium nitride based semiconductor layer is formed by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) on a ZnO buffer layer on a glass or silicon substrate. Independent claims are also included for the following: (i) a light emitting semiconductor element comprising a glass substrate of = 800 deg C softening point, a ZnO buffer layer and a semiconductor structure with a light emitting layer of a GaN based semiconductor; and (ii) production of a light emitting semiconductor element by the above process. Preferred Features: The GaN based layer may be a GaN or InGaN layer.