semiconductor heterostruktur, a ii vi compound contains, in ohmschem contact with a p - gaas substrate

摘要

A semiconductor structure useful in blue light emitting diodes and diode lasers is disclosed. The structure is formed of a substrate of p- type GaAs, a layer of a p- type II-VI compound of the formula ZnxQ1-xSySe1-x where Q=Mg, Cd or Mn, 0.5/=x/=1 and 0/=y/=1, separated from the substrate by a series of thin epitaxial undoped or p-doped layers including a layer of In0.5Al0.5P in contact with the layer of the II-VI compound, a layer of In0.5Ga0.5P or of AlxGa1-xAs where x=0.1-0.3 contacting the substrate, a layer of In0.5Ga0.5P contacting the layer of AlxGa1-xP and at least one layer of In0.5Al2Ga0.5-zP where 0z0.5 and the value of z decreases in the direction of the layer of In0.5Ga0.5P provided between and contacting the layer of In0.5Al0.5P and the layer of In0.5Ga0.5P.