Method of manufacture of devices in thin layers using the technique of the anisotropic reflectance

摘要

Method of control of the processes for the manufacture of devices in thin layers, in particular of semi conducting -. The method according to the invention consists, during the etching or deposition of a thin layer on a substrate, to measure the variations of a characteristic quantity of a reflectance anisotropic under normal incidence, or virtually - normal of a sample during this step of deposition or etching in order to obtain a signature characterizing this step of etching or deposition, and to use this signature for controlling and / or adjust the step of etching or deposition of a thin layer similar during the subsequent production of other similar devices. The application or control of the methods of manufacture of semi-finished - conductors.