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Method for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits
Method for forming advanced transistor structures with optimum short channel controls for high density/high performance integrated circuits
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机译:用于高密度/高性能集成电路的具有最佳短沟道控制的先进晶体管结构的形成方法
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摘要
A novel MOS transistor structure for improving device scaling by improving short channel control includes a buried back gate beneath a channel region of the MOS transistor. A separate contact to a well that is electrically communicated to the buried back gate improves short channel controls without performance degradations. In a preferred embodiment, the back gate is grounded when turning the n-channel MOS transistor off. In alternate embodiments, the buried layer produces retrograde p wells. In some applications, multiple buried layers may be used, with one or more being planar. CMOS devices may have independent, multiple buried back gates.
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