Methods of forming active matrix display devices with reduced susceptibility to image-sticking and devices formed thereby

摘要

Methods of forming active matrix display devices with reduced susceptibility to image sticking include the steps of forming a gate electrode on a face of a substrate and then forming a first insulating layer on the gate electrode and on the face to electrically isolate the gate electrode from adjacent regions. A first amorphous semiconductor layer is then formed on the first insulating layer. In particular, the first amorphous semiconductor layer, which acts as the active region of the TFT, is patterned to extend opposite the gate electrode. A channel protection layer is also formed on the first amorphous semiconductor layer. The channel protection layer is designed to protect the channel portion of the active region in the first amorphous semiconductor layer from potential damage which may occur during subsequent process steps. Then, the first insulating layer and the channel protection layer are etched simultaneously until the face of the substrate is exposed. Here, the step of forming a gate electrode includes the steps of forming a first conductive layer having a thickness of about 2000 Å on the face of the substrate and then patterning the first conductive layer to define a gate electrode of a thin-film transistor and a common electrode. The first insulating layer is then formed on the gate electrode and the common electrode, but is subsequently removed from the common electrode to reduce image-sticking effects which may impair display performance in in-plane switching (IPS) TFT-LCD display devices.