Silicon carbide power MESFET with surface effect supressive layer

摘要

A silicon carbide metal semiconductor field effect transitor fabricated on silicon carbide substrate with a layer which suppresses surface effects, and method for producing same. The surface-effect- suppressive layer may be formed on exposed portions of the transistor channel and at least a portion of each contact degenerate region. The surface-effect-suppressive layer may be made of undoped silicon carbide or of an insulator, such as silicon dioxide or silicon nitride. If the surface-effect-suppressive layer is made of silicon dioxide, it is preferred that the layer be fabricated of a combination of thermally- grown and chemical vapor deposition deposited silicon dioxide.