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Distributed feedback semiconductor laser diode, method for producing the same, and exposure method therefor

机译:分布式反馈半导体激光二极管,其制造方法及其曝光方法

摘要

A distributed feedback semiconductor laser diode includes an active layer for generating stimulated emission light and also includes a diffraction grating. The diffraction grating serves as a structure for providing a refractive index distribution and a gain distribution where the refractive index and the gain for the stimulated emission light exhibit a periodical change at an identical single period in the guiding direction of the stimulated emission light. A distributed feedback based on refractive index coupling and a distributed feedback based on gain coupling coexist in the distributed feedback semiconductor laser diode. The diffraction grating includes a phase discontinuous section where a phase of the periodical change of the refractive index and the gain is discontinuous. The phase discontinuous section is configured so that the phase shifts are within a range greater than 0 [rad] but less than &pgr; [rad], or within a range greater than &pgr; [rad] but less than 2&pgr; [rad] .
机译:分布式反馈半导体激光二极管包括用于产生受激发射光的有源层,并且还包括衍射光栅。衍射光栅用作用于提供折射率分布和增益分布的结构,其中受激发射光的折射率和增益在受激发射光的引导方向上在相同的单个周期处表现出周期性变化。基于折射率耦合的分布式反馈和基于增益耦合的分布式反馈共存于分布式反馈半导体激光二极管中。衍射光栅包括相位不连续部分,其中折射率和增益的周期性变化的相位不连续。相位不连续部分被配置为使得相移在大于0 [rad]但小于&pgr;的范围内。 [rad]或大于&pgr;的范围内[rad]但小于2&pgr; [rad]。

著录项

  • 公开/公告号US5960023A

    专利类型

  • 公开/公告日1999-09-28

    原文格式PDF

  • 申请/专利权人 SHARP KABUSHIKI KAISHA;

    申请/专利号US19970833983

  • 发明设计人 KOJI TAKAHASHI;

    申请日1997-04-11

  • 分类号H01S3/08;

  • 国家 US

  • 入库时间 2022-08-22 02:07:11

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