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Process for producing dense, self-sintered silicon carbide/carbon- graphite composites

机译:生产致密的自烧结碳化硅/碳石墨复合材料的方法

摘要

A dense, self-sintered silicon carbide/carbon-graphite composite material and a process for producing the composite material. The composite material includes a silicon carbide matrix, between 2 and 30 percent by weight carbon-graphite, and small amounts of sintering aids such as boron and free carbon. The silicon carbide has an average grain size between 2 and 15 &mgr;m, and the carbon-graphite has an average grain size between 10 and 75 &mgr;m, the average grain size of the carbon- graphite being greater than the average grain size of the silicon carbide. The composite material has a density of at least 80 percent of theoretical density as determined by the rule of mixtures for a composite material. This density is achieved with minimal microcracking at a high graphite loading with large graphite particles. The composite material exhibits good lubricity and wear characteristics, resulting in improved tribological performance. The process for producing the composite material uses a carbon-bonded graphite including at least 5 percent by weight carbon-precursor binder.
机译:致密的自烧结碳化硅/碳-石墨复合材料及其制造方法。该复合材料包括碳化硅基体(碳石墨的重量百分比在2%至30%之间)以及少量烧结助剂,例如硼和游离碳。碳化硅的平均粒径在2到15微米之间,碳石墨的平均粒径在10到75微米之间,碳石墨的平均粒径大于平均粒径。碳化硅。复合材料的密度至少为理论密度的80%,这是根据复合材料的混合规则确定的。在大石墨颗粒的高石墨负载下,最小的微裂纹可实现该密度。该复合材料具有良好的润滑性和耐磨性,从而改善了摩擦性能。用于生产复合材料的方法使用碳键合的石墨,该碳键合的石墨包含至少5重量%的碳前体粘合剂。

著录项

  • 公开/公告号US5976429A

    专利类型

  • 公开/公告日1999-11-02

    原文格式PDF

  • 申请/专利权人 THE MORGAN CRUCIBLE COMPANY PLC;

    申请/专利号US19940335446

  • 发明设计人 MARK E. PFAFF;XIN E. CHEN;

    申请日1994-11-07

  • 分类号C01B31/00;

  • 国家 US

  • 入库时间 2022-08-22 02:06:51

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