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Process for producing a dense, self-sintered silicon carbide/carbon-graphite composite

机译:制备致密的自烧结碳化硅/碳-石墨复合材料的方法

摘要

A process for producing a dense, self-sintered silicon carbide/carbon-graphite composite material is disclosed. The process for producing the composite material comprises the steps of:(a) providing a particulate mixture comprising:(i) carbon-bonded graphite of between 2 and 30 percent by weight of the mixture, the carbon-bonded graphite comprising at least 5 percent by weight carbon-precursor binder, the balance being graphite,(ii) between 1 and 10 percent by weight of a binder,(iii) between 0,1 and 15 percent of a sintering aid,(iv) between 1 and 5 percent by weight of a lubricant, and(v) the balance being silicon carbide; and(b) shaping the mixture to form a green body;(c) heating the green body in a non-oxidising atmosphere at a carbonizing temperature above 371° (700°F) to carbonize the binder; and(d) sintering the carbonized body at a temperature ranging from 1900°C to 2300°C in a substantially inert atmosphere at or below atmospheric pressure to produce a sintered body having a density of at least 80 percent of theoretical and a microstructure in which the average grain size of the carbon-graphite is larger than the average grain size of the silicon carbide.
机译:公开了一种生产致密的,自烧结的碳化硅/碳-石墨复合材料的方法。生产复合材料的方法包括以下步骤:(a)提供一种颗粒混合物,包括:(i)占混合物重量2%至30%的碳键合石墨,碳键合石墨包含至少5%重量比的碳前体粘合剂,其余为石墨,(ii)1%至10%粘合剂的重量;(iii)烧结助剂的0.1%至15%;(iv)润滑剂的1-5%重量;以及(v)其余为碳化硅; (b)使混合物成形以形成生坯;(c)在非氧化气氛中在高于371°(700°F)的碳化温度下加热该生坯以使粘合剂碳化; (d)在基本上惰性的气氛中,在大气压下或低于大气压,在1900℃至2300℃的温度范围内烧结碳化体,以产生密度为理论值和微观结构至少80%的烧结体,其中碳石墨的平均粒径大于碳化硅的平均粒径。

著录项

  • 公开/公告号EP0906896B2

    专利类型

  • 公开/公告日2013-10-16

    原文格式PDF

  • 申请/专利权人 MORGAN CRUCIBLE CO;

    申请/专利号EP19980203777

  • 发明设计人 PFAFF MARK E.;CHEN XIN E.;

    申请日1994-02-04

  • 分类号C04B35/52;C04B35/56;F27B9/04;F27B9/10;

  • 国家 EP

  • 入库时间 2022-08-21 16:35:48

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