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Photocathode and electron tube having enhanced absorption edge characteristics
Photocathode and electron tube having enhanced absorption edge characteristics
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机译:具有增强的吸收边缘特性的光电阴极和电子管
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摘要
The present invention relates to a photocathode having a structure for improving the quantum efficiency and sharpening the absorption edge characteristic on the long wavelength side within the wavelength range of incident light to improve the photosensitivity, and an electron tube having the same. The photocathode according to the present invention comprises at least a p-type GaAlN layer for absorbing incident light to excite photoelectrons, a p-type GaN layer which covers the second major surface of the p-type GaAlN layer, the second major surface opposing a first major surface that faces a substrate, and a surface layer provided to sandwich the p-type GaN layer with the p-type GaAlN layer and mainly containing an alkali metal or an alkali metal oxide.
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