WIRING STRUCTURE IN SINGLE-CRYSTAL SILICON WAFER, CONNECTOR FOR NARROW PITCH, MICROMACHINE, PIEZOELECTRIC ACTUATOR, ELECTROSTATIC ACTUATOR, INK JET HEAD, INK JET PRINTER, AND LIQUID CRYSTAL PANEL

摘要

PROBLEM TO BE SOLVED: To prevent short circuitings, even if inclination (lifting) occurs in a semiconductor device, or even if there is nonuniformity in the outside diameter in semiconductor devices or nonuniformity of height in terminal electrodes. ;SOLUTION: For wiring structure, a trench 14 is made at the surface, and also an SiO2 film 16 is made on a surface 12 and the trench 14. Metallic wiring 20 is made at the bottom of the trench 14, where the SiO2 film 16 is made. By providing the surface of a single-crystal silicon wafer 10 with the trench 14 and providing the bottom of the trench 14 with the metallic wiring 20 this way, will enable one to prevent short circuit from occurring to the metallic wiring 20, even if an inclination occurs in the semiconductor device 24 connected to the metallic wiring 20.;COPYRIGHT: (C)2000,JPO