METHOD OF EXCLUDING GROWTH OF OXIDE IN SHALLOW TRENCH ISOLATING MEMBER IN PERIODS FOLLOWING CMOS OXIDATION TREATMENT PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a method for forming in a semiconductor device a shallow trench isolating member which endures the follow-on oxidation treatment process and excludes stress inducing damages, and to provide a structure obtained by the method. ;SOLUTION: After a trench is etched, a line oxide 110 is formed on the side wall of the trench. Annealing is performed in an atmosphere containing nitrogen, so that nitrogen 102 is introduced in the interface between the liner 110 and silicon 104. After that, the trench is filled with a trench filling material 114. By the nitrogen 102, resistance to oxidation is applied to the interface extending into a period of the following treatment process step.;COPYRIGHT: (C)2000,JPO