首页> 外国专利> METHOD FOR FORMATION OF SCATTERING FACE, PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPLIANCE

METHOD FOR FORMATION OF SCATTERING FACE, PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC APPLIANCE

机译:散射面的形成方法,液晶显示装置的生产和电子设备

摘要

PROBLEM TO BE SOLVED: To selectively form a reflective face having good scattering characteristics on the surface of a glass substrate or semiconductor substrate. ;SOLUTION: This method for the formation of a scattering face includes the following steps. In the first step, a modified layer 202 which is easily etched than a substrate 200 is formed on the surface of the substrate 200 by, for example, radicals F* produced by plasma. In the second step, a resist layer 203 patterned to have plural circular openings is formed on the surface of the modified layer 202. In the third step, the substrate 200 and the modified layer 202 are subjected to wet etching, for example, in a hydrofluoric acid aq.soln. to form many recesses 238 having smooth slopes on the surface of the substrate 200. In the fourth step, a light-reflecting layer such as aluminum is formed on the surface of the substrate 200 including the a region where recesses 238 are formed.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:在玻璃基板或半导体基板的表面上选择性地形成具有良好散射特性的反射面。 ;解决方案:这种形成散射面的方法包括以下步骤。在第一步中,例如通过等离子体产生的自由基F *在基板200的表面上形成比基板200容易蚀刻的改性层202。在第二步骤中,图案化为具有多个圆形开口的抗蚀剂层203形成在改性层202的表面上。在第三步骤中,例如,在基板200和改性层202中进行湿法蚀刻。氢氟酸水溶液在第四步骤中,在包括形成凹部238的区域的基板200的表面上形成诸如铝的光反射层。 :(C)2000,日本特许厅

著录项

  • 公开/公告号JP2000227610A

    专利类型

  • 公开/公告日2000-08-15

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP19990028682

  • 发明设计人 MATSUO MUTSUMI;

    申请日1999-02-05

  • 分类号G02F1/1365;G02B5/02;G02F1/1343;G09F9/00;

  • 国家 JP

  • 入库时间 2022-08-22 02:02:08

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