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HIGHLY DENSE MULTILAYERED THIN FILM AND ITS FILM FORMING METHOD

机译:高密度多层薄膜及其成膜方法

摘要

PROBLEM TO BE SOLVED: To provide a highly dense multilayered thin film such as an antireflection film and a color resolving filter having improved compactness and stability against an external environment such as humidity and temp., and to provide its film forming method. SOLUTION: In the antireflection film made of a multilayered thin film 4 consisting of, from the substrate side, an intermediate refractive index layer 1, a high refractive index synthesized layer 2 and a low refractive index layer 3, the high refractive index synthesized layer is produced in the following process. A TiO2 film as the main layer (a) which dominantly determines the refractive index of the high refractive index layer is formed to about =10 nm thickness to the stage just before a columnar structure is produced, and then an SiO2 layer as a structure controlling layer (b) is formed to =1/10 thickness of the main layer (a) to produce a unit layer x. The unit layer x is repeatedly laminated into a synthesized layer y having a desired film thickness to obtain the high refractive index synthesized layer 2. Thereby, the compactness can be improved by suppressing the production of the columnar structure in the thin films, and an optical multilayered thin film having excellent environmental stability and productivity can be obtd. without decreasing the optical spectral characteristics as a whole.
机译:解决的问题:提供一种高密度的多层薄膜,例如抗反射膜和彩色分辨滤光片,其具有改善的致密性和对诸如湿度和温度的外部环境的稳定性,并提供其成膜方法。解决方案:在由多层薄膜4制成的减反射膜中,从基板的侧面看,该多层薄膜由中间折射率层1,高折射率合成层2和低折射率层3组成,该高折射率合成层为在以下过程中产生。以TiO 2膜为主要层(a),其主要决定高折射率层的折射率,直到形成柱状结构之前的阶段形成厚度约<= 10 nm,然后形成SiO 2层作为结构控制层(b)形成为主层(a)的厚度的<= 1 // 10,以产生单位层x。将单位层x重复层压到具有期望的膜厚度的合成层y中以获得高折射率合成层2。由此,可以通过抑制薄膜中的柱状结构的产生和光学性来提高致密性。可以得到具有优异的环境稳定性和生产率的多层薄膜。整体上不会降低光谱特性。

著录项

  • 公开/公告号JP2000171607A

    专利类型

  • 公开/公告日2000-06-23

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP19980358433

  • 发明设计人 KAMIYA OSAMU;

    申请日1998-12-02

  • 分类号G02B1/11;B32B7/02;B32B9/00;C23C14/06;C23C14/34;G02B5/28;

  • 国家 JP

  • 入库时间 2022-08-22 02:01:29

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