Hg-BASED II-VI COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To increase both the resolution and the withstanding voltage of an HgCdTe semiconductor device by making the carrier density near a pn junction on the surface of a p-type Hg-based II-VI compound semiconductor substrate smaller than that in a bulk. ;SOLUTION: In a p-type Hg-based II-VI compound semiconductor substrate 1, an n-type region 2 which constitutes a one-dimentional or two-dimentional photodiode array is formed. The surface of the p-type Hg-system II-VI compound semiconductor substrate 1 is treated with excited hydrogen to make the carrier density in part of the surface of the substrate near the n-type region 2 smaller than that in a bulk. Then, a pn junction 3 is formed in that region where the carrier density is smaller than that in a bulk. Thereby, both the resolution and the withstanding voltage of an HgCdTe semiconductor device can be increased.;COPYRIGHT: (C)2000,JPO